Design of a 3–10 GHz UWB CMOS T/R switch

Abstract A 3–10 GHz broadband CMOS T/R Switch for ultra‐wideband (UWB) transceiver is proposed. This broadband CMOS transmit/receive (T/R) Switch is fabricated based on the 0.18 μm 1P6M standard CMOS process. On‐chip measurement of the CMOS T/R Switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1 ± 1.3 dB. The return losses at both input and output terminals are higher than 14 dB. It is also characterized with 25–34 dB isolation and 18–20 dBm input P 1dB . The broadband CMOS T/R Switch shows highly linear phase and group delay of 20 ± 10 ps from 10 MHz to 15 GHz. It can be easily integrated with other CMOS RFICs to form on‐chip transceivers for various UWB applications. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 457–460, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23129