A novel pulsed magnetron sputter technique utilizing very high target power densities

Using a novel pulsed power supply in combination with a standard circular flat magnetron source, operated with a Cu target, a peak power density of 2800 W cm-2 was achieved. This results in a very intense plasma with peak ion current densities of up to 3.4 A cm−2 at the substrate situated 10 cm from the target. The ionized fraction of the deposited Cu flux was estimated to be approximately 70% from deposition rate measurements. The potential for high-aspect-ratio trench filling applications by high power pulsed magnetron sputtering is demonstrated by deposition in via-structures. The high power pulsed technique also results in a higher degree of target utilization and an improved thickness uniformity of the deposited films compared with conventional d.c. magnetron sputtering.