振荡器强度
紧密结合
单层
背景(考古学)
凝聚态物理
带隙
物理
材料科学
电子结构
纳米技术
量子力学
地理
谱线
考古
出处
期刊:Springer theses
日期:2019-01-01
卷期号:: 13-33
标识
DOI:10.1007/978-3-030-25715-6_2
摘要
In this chapter, we present a description of the electronic and optical properties of mono- and few-layer InSe in the context of a tight-binding model. We find a marked change in the band gap on going from the bulk (band gap $$\sim $$ 1.3 eV) to the monolayer (band gap $$\sim $$ 2.8 eV) case, in agreement with experiment. We find that the principal interband optical transition is of a dominantly out-of-plane polarised character, with the oscillator strength increasing for thicker crystals, while the next-lowest energy transition couples strongly to in-plane polarised light, with an oscillator strength which is largely independent of the number of layers.
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