发光二极管
电压降
量子效率
二极管
光电子学
物理
材料科学
量子力学
分压器
电压
作者
Daniel Feezell,James S. Speck,Steven P. DenBaars,Shuji Nakamura
出处
期刊:IEEE/OSA Journal of Display Technology
[Institute of Electrical and Electronics Engineers]
日期:2013-04-01
卷期号:9 (4): 190-198
被引量:315
标识
DOI:10.1109/jdt.2012.2227682
摘要
This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) ( c -plane), semipolar (202̅1̅), semipolar (202̅1̅), and nonpolar (101̅0̅) ( m -plane). Based on simulations, we show that the semipolar (202̅1̅) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (202̅1̅) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (202̅1̅) LED with an external quantum efficiency of more than 50% at 100 A/cm 2 .
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