材料科学
光电子学
异质结
光电探测器
发光二极管
肖特基势垒
工作职能
肖特基二极管
氮化镓
半导体
二极管
响应度
纳米技术
图层(电子)
作者
Chujun Yi,Yibo Chen,Zhe Kang,Yanan Ma,Yue Yang,Weijie Liu,Meng Zhu,Yihua Gao
标识
DOI:10.1002/aelm.202000955
摘要
Due to their excellent electrical conductivity, high transmittance, and adjustable work function, 2D transition-metal carbides and nitrides have shown great promise in optoelectronic applications, especially in MXene-semiconductor devices. In this work, Ti3C2TX/(n/p)-GaN van der Waals heterostructures are fabricated and studied. The Ti3C2TX/(n/p)-GaN Schottky junctions are confirmed by ultraviolet photoelectron spectroscopy (UPS) with a work function ≈4.2 eV of Ti3C2TX. Based on the Ti3C2TX/(n/p)-GaN Schottky junctions, high-speed photodetectors and stable orange light emitting diodes (LEDs) are fabricated. The Ti3C2TX/n-GaN heterostructure photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W−1) and on/off ratio (≈11300) under a light source of 365 nm wavelength and 96.9 µW cm−2 power density. And the Ti3C2TX/p-GaN heterostructure LED remains a stable orange light emission under bias voltage from 4 to 22 V. The chromaticity coordinates and color temperature of EL spectrum under 22 V are further calculated to be 0.4541, 0.4432, and 2953 K, respectively. The authors believe that this work provides fundamental insight into the applications of MXene in optoelectronic devices.
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