Tunable synaptic behavior realized in C3N composite based memristor

Inspired by the parallel performing of storage and processing information in biological synapse, artificial synapse that can control ionic and protonic currents are ideal means for attracted tremendous attention as a promising option to break the von Neumann bottleneck. Here we demonstrate an artificial synapse with tunable synaptic behavior based on solution-processed two-dimensional (2D) C3N/polyvinylpyrrolidone (PVPy). The proton modulated memristive characteristics of synaptic device are verified by ambient pressure X-ray photoelectron spectroscopy under different H2O gas atmosphere. The highly proton conducting of C3N/PVPy matrix stems from the hydrogen bonding network between C3N and PVPy, as well as the large amount of ordered nitrogen atoms in C3N. The artificial synapse ensure a direct imitation of short-term and long-term plasticity in biological synapses including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), paired-pulse depression (PPD), PPF following PPD and post-tetanic potentiation (PTP). The C3N/PVPy matrix-based memristor which can mimic the synapse cleft based on proton conducting mechanism may find further applications in artificial intelligence.