Resistive-switching tunability with size-dependent all-inorganic zero-dimensional tetrahedrite quantum dots

All-inorganic zero-dimensional (0D) tetrahedrite (Cu12Sb4S13, CAS) quantum dots (QDs) have attracted extensive attention due to their excellent optical properties, bandgap tunability, and carrier mobility. In this paper, various sized CAS QDs (5.1, 6.7, and 7.9 nm) are applied as a switching layer with the structure F:SnO2 (FTO)/CAS QDs/Au, and in doing so, the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported. The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time. Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs. Moreover, the presented memory devices have reliable bipolar resistive-switching properties, a resistance (ON/OFF) ratio larger than 104, high reproducibility, and good data retention ability. After 1.4 ×106 s of stability testing and 104 cycles of quick read tests, the change rate of the ON/OFF ratio is smaller than 0.1%. Furthermore, resistive-witching stability can be improved by ensuring a uniform particle size for the CAS QDs. The theoretical calculations suggest that the space-charge-limited currents (SCLCs), which are functioned by Cu 3d, Cu 3p and S 3p to act as electron self-trapping centers due to their quantum confinement and form conduction pathways under an electric field, are responsible for the resistive-switching effect. This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.