饱和速度
饱和(图论)
兴奋剂
材料科学
电子迁移率
速度饱和
饱和电流
声子
凝聚态物理
薄膜
分析化学(期刊)
光电子学
电子
漂移速度
晶体管
电压
MOSFET
化学
纳米技术
电气工程
物理
工程类
组合数学
量子力学
色谱法
数学
作者
Hareesh Chandrasekar,Junao Cheng,Tianshi Wang,Zhanbo Xia,Nicholas G. Combs,Christopher R. Freeze,Patrick Marshall,Joe F. McGlone,Aaron R. Arehart,S. A. Ringel,Anderson Janotti,Susanne Stemmer,Wu Lu,Siddharth Rajan
摘要
BaSnO3, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining the device performance. We report on the experimental measurement of the electron saturation velocity in La-doped BaSnO3 thin films for a range of doping densities. The predicted saturation velocities based on a simple LO-phonon emission mode, using an effective LO phonon energy of 120 meV show good agreement with the measurements of velocity saturation in La-doped BaSnO3 films. Density-dependent saturation velocity in the range of 1.8 × 107 cm/s reducing to 2 × 106 cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 1013 cm−2 to 2 × 1014 cm−2, respectively. These results are expected to aid the informed design of BaSnO3 as an active material for high-charge density electronic transistors.
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