Voltage controllable dual-band response from InAs/GaSb strained layer superlattice detectors with nBn design

A report is presented on voltage controllable mid-wave infrared (MWIR) and long-wave infrared (LWIR) response using an InAs/GaSb strained layer superlattice detector with an nBn design. Under forward bias, the MWIR carriers are extracted and under reverse bias the LWIR carriers are extracted. Peak detectivity was measured to be 1.2×1011 Jones (at λ=5 µm and Vb=+1 V) and 1.2×1010 Jones (at λ=10 µm and Vb=−1 V).