肖特基二极管
太赫兹辐射
光电子学
砷化镓
探测器
材料科学
二极管
肖特基势垒
半导体
电压
光学
物理
电气工程
工程类
作者
A V Badin,V D Moskalenko,D. A. Pidotova
出处
期刊:Journal of physics
[IOP Publishing]
日期:2021-03-01
卷期号:1862 (1): 012012-012012
被引量:1
标识
DOI:10.1088/1742-6596/1862/1/012012
摘要
Abstract The results of research of the electrophysical and frequency characteristics of the semiconductor structure of a Schottky diode based on gallium arsenide are presented. The diode structure was modelled in the Sentaurus TCAD software package. A comparison of the current-voltage characteristics obtained by mathematical modeling and by experiment are presented. The frequency response in the range of 115-257 GHz is shown. The use of a Schottky diode as a continuous terahertz radiation detector is shown.
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