石墨烯
材料科学
范德瓦尔斯力
欧姆接触
转印
电极
纳米技术
肖特基势垒
薄脆饼
基质(水族馆)
场效应晶体管
半导体
光电子学
晶体管
复合材料
化学
图层(电子)
分子
电气工程
有机化学
物理化学
二极管
电压
工程类
海洋学
地质学
作者
Guanyu Liu,Ziao Tian,Zhenyu Yang,Zhongying Xue,Miao Zhang,Xudong Hu,Yang Wang,Yuekun Yang,Paul K. Chu,Yongfeng Mei,Lei Liao,Weida Hu,Zengfeng Di
标识
DOI:10.1038/s41928-022-00764-4
摘要
Metal–semiconductor junctions are essential components in electronic and optoelectronic devices. With two-dimensional semiconductors, conventional metal deposition via ion bombardment results in chemical disorder and Fermi-level pinning. Transfer printing techniques—in which metal electrodes are predeposited and transferred to create van der Waals junctions—have thus been developed, but the predeposition of metal electrodes creates chemical bonds on the substrate, which makes subsequent transfer difficult. Here we report a graphene-assisted metal transfer printing process that can be used to form van der Waals contacts between two-dimensional materials and three-dimensional metal electrodes. We show that arrays of metal electrodes with both weak (copper, silver and gold) and strong (platinum, titanium and nickel) adhesion strengths can be delaminated from a four-inch graphene wafer due to its weak van der Waals force and absence of dangling bonds, and transfer printed onto different substrates (graphene, molybdenum disulfide and silicon dioxide). We use this approach to create molybdenum disulfide field-effect transistors with different printed metal electrodes, allowing the Schottky barrier height to be tuned and ohmic and Schottky contacts to be formed. We also demonstrate the batch production of molybdenum disulfide transistor arrays with uniform electrical characteristics.
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