Polycrystalline AlN films of fine crystallinity prepared by ion-beam assisted deposition

Aluminum nitride films were synthesized by electron gun (e-gun) evaporation of aluminum onto Si(111) wafer and glassy carbon, with simultaneous bombardment by 5–20 keV nitrogen ions. Under specific experimental conditions, polycrystalline AlN films of fine crystallinity were obtained by this method. The correlation between experimental parameters and the resulted structure as well as the stoichiometry of the AlN films is also discussed.