掺杂剂
钻石
材料科学
悬空债券
从头算
兴奋剂
从头算量子化学方法
化学物理
结晶学
硅
化学
分子
光电子学
冶金
有机化学
作者
S. A. Kajihara,Alex Antonelli,J. Bernholc,Roberto Car
标识
DOI:10.1103/physrevlett.66.2010
摘要
Potential n-type dopants in diamond are investigated via ab initio methods. The well-known distortions around the deep donor N are found to arise from the interaction of the N lone pair with a C dangling bond. P, Li, and Na are all shallow dopants, but their solubilities are muh too low for doping via in-diffusion. Li is a relatively fast diffuser, Na is stable up to moderate temperatures, while P should remain immobile even at high temperatures. Na, being an interstitial dopant, is particularly suitable for ion implantation, since there is no need to displace host atoms.
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