ab initio study of quantized conduction mechanism in trilayered heterostructure for scaled down memory device applications

Interface of the layered heterostructure revealing the quantized conductance phenomena which cannot be achieved with either semiconducting layer alone in absence of externally applied electric field has wide range of applications in electronic industry of RRAM devices. A comprehensive analysis of electronic properties of CeO2/Ta2O5/CeO2 trilayered heterostructure has been carried out using first principle calculation employing VASP to explore the state of art of RRAM including barrier height, barrier width, conducting filament width and shape. For better understanding of conduction mechanism involved in RS, the influence of crystalline and amorphous phase of Ta2O5 sandwiched between CeO2 layers is analyzed by potential energy lineups, DOS, isosurface and integrated charge density plots. Origin of quantized states formed near the Fermi level in DOS is provided physically by growth of charge conducting filaments in isosurface charge density plots, and charge redistribution from Bader charge analysis. Outcomes of this study confirmed that with more quantized charge, crystalline Ta2O5 is better for interfacial RRAM devices. Apart from previously available findings, results of this study will provide new route to the potential application of this layered material in electronics especially storage devices.