放大器
噪音(视频)
电气工程
微波食品加热
低噪声放大器
电子工程
材料科学
工程类
计算机科学
电信
CMOS芯片
图像(数学)
人工智能
作者
Z Huang,Yang Zhang,Xingjun Ge
标识
DOI:10.1109/temc.2025.3560618
摘要
This article investigates the impact of high-power microwaves (HPM) on low-noise amplifiers (LNA) and protective measures. It begins by discussing the predominant types of LNA, followed by an examination of experimental methodologies and advancements in understanding HPM's effects on LNA. The article systematically organizes the phenomena related to HPM interference and damage, as well as explores the mechanisms underlying these effects. Specifically, it analyzes how parameters such as pulsewidth, repetition frequency, and carrier frequency influence the damage threshold. To address existing gaps in current research, potential directions for future investigation and development are proposed. Furthermore, recent advancements in protective strategies for LNA are discussed, including limiter technologies and transistor designs specifically engineered to mitigate HPM threats. This article aims to provide valuable insights for researchers and engineers striving to enhance the resilience of LNA in high-power environments.
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