Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Suppressing the emission from (0001) plane region with low luminescence efficiency that exists on the top of nanowires (NWs) is necessary to realize highly efficient GaInN/GaN multi quantum shell (MQS) light-emitting diodes (LEDs). In this study, we attempted to improve the crystal growth by introducing electron blocking layers (EBLs) and to suppress the current leak in NW LEDs by using SiO₂ insulating film on top of NWs. The EBL structure features different thicknesses at each crystalline plane to reduce the current injection into (0001) plane, suppress red emission with low luminescence efficiency, and improve the light output by 2.4 times. Given that the luminescence from (0001) plane region remains, further optimization of EBL growth conditions, such as V/III ratio and Al composition, is essential. In addition, the luminescence from (0001) plane region and the current leakage can be reduced by forming SiO₂ insulating film on top of the NWs. Although even if an insulating film was formed on the top of NWs on which EBLs were grown, the SiO₂ adhering to (1-101) plane resulted in a decrease in light output and destruction due to high resistance. The results indicate the possibility of realizing highly efficient GaInN/GaN MQS-NW LEDs by inserting EBL structures between MQS and p- GaN shell.