热稳定性
无定形固体
能量转换效率
材料科学
电极
图层(电子)
钙钛矿(结构)
化学工程
碳纤维
光伏系统
无定形碳
光电子学
纳米技术
化学
复合材料
电气工程
有机化学
物理化学
复合数
工程类
作者
Cong Zhang,Xingtian Yin,Yuxiao Guo,Haixia Xie,Dan Liú,Wenxiu Que
摘要
Due to their low cost, tunable band gap and excellent thermostability, all-inorganic halide perovskites CsPbX3 (X = Br, I) have become a kind of promising photovoltaic material. However, compared to the organic-inorganic hybrid perovskite solar cells, the performance of CsPbX3 solar cells still needs to be improved. In this work, for the first time, we applied the sol-gel derived amorphous InGaZnO4 film as electron transport layers (ETLs) in CsPbX3-based devices. In these devices, the carbon electrode deposited by screen printing replaced the unstable hole transport layer and the expensive metal electrode to obtain hole transport free carbon-based devices, which significantly simplifies the preparation process and reduces the production cost. With the application of amorphous InGaZnO4 films, devices show a relatively high power conversion efficiency (9.07%) and excellent thermal stability. Compared with the reported CsPbX3 devices using SnO2 or TiO2 ETLs, the performance of amorphous InGaZnO4 based devices has been significantly improved. This work provides a promising route to prepare highly thermally stable all-inorganic perovskite solar cells using a-IGZO films.
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