Unlocking 1550 nm Laser Power Conversion by InGaAs Single- and Multi-Junction PV Cells

Photovoltaic cells based on In0.53Ga0.47 As absorber material grown lattice-matched on InP substrates are developed, targeting laser power conversion around 1550 nm in the optical C-band. Single- and multi-junction devices are fabricated and characterized. In addition, a thin film route which allows for the implementation of a back surface reflector is developed based on wet-chemical etching of the InP substrate. The influence of the junction type (homo-, front-hetero-, rear-heterojunction) on luminescence coupling in 2-junction devices is explored. Also, a first 10-junction device is investigated. First experimental results will be presented in this conference contribution.