欧姆接触
肖特基二极管
肖特基势垒
金属半导体结
材料科学
兴奋剂
整改
光电子学
硅
活化能
等效串联电阻
宽禁带半导体
凝聚态物理
分析化学(期刊)
纳米技术
化学
功率(物理)
电气工程
物理
二极管
热力学
电压
工程类
图层(电子)
色谱法
有机化学
作者
Cristyan Quiñones-García,Dolar Khachariya,Pegah Bagheri,Pramod Reddy,Seiji Mita,Ronny Kirste,Shashwat Rathkanthiwar,James Tweedie,Spyridon Pavlidis,E. Kohn,Ramón Collazo,Zlatko Sitar
摘要
Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I–V measurements. An activation energy of ∼300 meV was observed in the series resistance, which corresponded to the ionization energy of the deep Si donor state. Both Ohmic and Schottky contacts were stable up to 650 °C, with around four orders of magnitude rectification at this elevated temperature. These results demonstrate the potential of AlN as a platform for power devices capable of operating in extreme environments.
科研通智能强力驱动
Strongly Powered by AbleSci AI