Temperature Compensation Method Based on Bilinear Interpolation for Downhole High-Temperature Pressure Sensors

双线性插值 插值(计算机图形学) 补偿(心理学) 温度测量 压力传感器 石油工程 声学 计算机科学 工程类 机械工程 热力学 物理 精神分析 心理学 计算机视觉 帧(网络)
作者
Yizhan Shu,Chenquan Hua,Zerun Zhao,Pengcheng Wang,Haocheng Zhang,Wenxin Yu,Haobo Yu
出处
期刊:Sensors [MDPI AG]
卷期号:24 (16): 5123-5123 被引量:7
标识
DOI:10.3390/s24165123
摘要

Due to their high accuracy, excellent stability, minor size, and low cost, silicon piezoresistive pressure sensors are used to monitor downhole pressure under high-temperature, high-pressure conditions. However, due to silicon’s temperature sensitivity, high and very varied downhole temperatures cause a significant bias in pressure measurement by the pressure sensor. The temperature coefficients differ from manufacturer to manufacturer and even vary from batch to batch within the same manufacturer. To ensure high accuracy and long-term stability for downhole pressure monitoring at high temperatures, this study proposes a temperature compensation method based on bilinear interpolation for piezoresistive pressure sensors under downhole high-temperature and high-pressure environments. A number of calibrations were performed with high-temperature co-calibration equipment to obtain the individual temperature characteristics of each sensor. Through the calibration, it was found that the output of the tested pressure measurement system is positively linear with pressure at the same temperatures and nearly negatively linear with temperature at the same pressures, which serves as the bias correction for the subsequent bilinear interpolation temperature compensation method. Based on this result, after least squares fitting and interpolating, a bilinear interpolation approach was introduced to compensate for temperature-induced pressure bias, which is easier to implement in a microcontroller (MCU). The test results show that the proposed method significantly improves the overall measurement accuracy of the tested sensor from 21.2% F.S. to 0.1% F.S. In addition, it reduces the MCU computational complexity of the compensation model, meeting the high accuracy demand for downhole pressure monitoring at high temperatures and pressures.

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