In-situ delamination detection in multi-layered semiconductor packages

Accurately determining the material properties of large-area solder joints is crucial for developing precise lifetime models in modern power electronic devices, as these joints play a vital role in providing both electrical and mechanical connections between components. This study presents a novel, non-destructive, and in-situ technique based on laser Doppler vibrometry for detecting crack initiation and monitoring crack growth in semiconductor structures. This method was successfully applied to determine various stages of die attach degradation during accelerated mechanical cyclic tests of large area solder joints, and was verified by scanning acoustic microscopy (SAM) measurements as well as optical methods. Furthermore, analysis of the acoustic emission (AE) signal was conducted as an alternative method for monitoring crack propagation. Optical and electron microscopy were employed to analyse crack initiation, crack paths, and crack surface morphologies. The in-situ delamination detection technique can provide essential information for robust lifetime prediction modelling of material systems in advanced semiconductor components.