硅
光电效应
扩散
基质(水族馆)
材料科学
杂质
电导率
电阻率和电导率
带隙
分析化学(期刊)
二氧化硅
光电子学
化学
物理化学
冶金
电气工程
物理
热力学
海洋学
有机化学
工程类
色谱法
地质学
作者
Э. У. Арзикулов,Alisher D. Nurimov,F. Salakhitdinov,U.A. Ashirov,T.S. Sharafova,A.Sh. Khujanov,R.M. Usanov
标识
DOI:10.26565/2312-4334-2023-4-17
摘要
This article presents experimental results on the technology of obtaining and studying the lateral photoelectric effect (LPE) in hybrid structures (HS) of the Fe/SiO2/p-Si<B, Mn> and Fe/SiO2/n-Si<B, Mn> types. The technology for obtaining such HS consists of two parts: firstly, obtaining compensated (C), highly compensated (HC), and over-compensated (OC) samples of Si <B, Mn>. Secondly, obtaining HS Fe/SiO2/p-Si<B, Mn> and Fe/SiO2/n-Si<B, Mn>. Based on the results, it is shown that sufficiently good HS has been obtained. Experiments on the study of LPE have shown that in the studied HS there is a pronounced manifestation of the lateral photoelectric effect, the magnitude and nature of which strongly depend on the type of conductivity and resistivity of the compensated silicon. The observed features are explained by the fact that in С, HC, and OC silicon samples, impurities that create deep levels in the silicon band gap form various multi-charged complexes that modulate the energy band of silicon, which lead to significant changes in its physicochemical and generation-recombination properties, which underlies the observed effects. Based on the LPE studies, depending on the contact distance, it is possible to determine the numerical values of the diffusion lengths of the minor current carriers (Lp and Ln), their lifetimes (τp and τn), and diffusion coefficients (Dp and Dn) on the substrate material.
科研通智能强力驱动
Strongly Powered by AbleSci AI