材料科学
共发射极
发光二极管
光电子学
量子点
图层(电子)
量子效率
聚合物
纳米技术
复合材料
作者
Boyu Zhou,Mingming Zhou,Tong Zhang,Xie Shiyi,Yu-Han Jiang,Zhi Chang,Yanping Wang,Youtian Tao,Dingke Zhang,Xiaoyun Mi,Xiuling Liu
标识
DOI:10.1021/acsami.5c03725
摘要
Quantum-dot light-emitting diodes (QLEDs) are regarded as promising options for various optoelectronic applications. However, they struggle with an excessive injection of electrons relative to holes, constraining their performance. Here, we propose an efficient hole transport layer (HTL) sensitization method that can reuse leaked electrons and raise the hole transport capability to tackle this challenge. The HTL consists of poly(9-vinylcarbazole) (PVK) mixed with a light-blue thermally activated delayed fluorescence emitter, 2-(3,5-bis(trifluoromethyl)phenyl)-5-(2,3,4,5,6-penta(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (dCF35CzOXD). The resulting red QLEDs at a mixing concentration of 25 wt % simultaneously yield a highest current efficiency/external quantum efficiency (EQE) of 42.3 cd A-1/35.8%, and an extended T50 lifetime exceeding 81,408 h at 100 cd m-2, positioning them among the most efficient and stable QLEDs reported to date. Remarkably, a consistent EQE value exceeding 32.0% is maintained across a broad luminance range of 9000 to 200,000 cd m-2.
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