Next‐Generation Image Sensors Based on Low‐Dimensional Semiconductor Materials

Abstract With the rapid advancement of technology of big data and artificial intelligence (AI), the exponential increase in visual information leads to heightened demands for the quality and analysis of imaging results, rendering traditional silicon‐based image sensors inadequate. This review serves as a comprehensive overview of next‐generation image sensors based on low‐dimensional semiconductor materials encompassing 0D, 1D, 2D materials, and their hybrids. It offers an in‐depth introduction to the distinctive properties exhibited by these materials and delves into the device structures tailored specifically for image sensor applications. The classification of novel image sensors based on low‐dimensional materials, in particular for transition metal dichalcogenides (TMDs), covering the preparation methods and corresponding imaging characteristics, is explored. Furthermore, this review highlights the diverse applications of low‐dimensional materials in next‐generation image sensors, encompassing advanced imaging sensors, biomimetic vision sensors, and non‐von Neumann imaging systems. Lastly, the challenges and opportunities encountered in the development of next‐generation image sensors utilizing low‐dimensional semiconductor materials, paving the way for further advancements in this rapidly evolving field, are proposed.