化学
异质结
激发
超短脉冲
等离子体子
光子学
材料科学
光电子学
光学
激光器
物理
量子力学
作者
Jiaxu Zhang,Rafael Muñoz‐Mármol,Shuai Fu,Xiaodong Li,Wenhao Zheng,Andrea Villa,Giuseppe M. Paternò,Darius Pohl,Alexander Tahn,Mike Hambsch,Stefan C. B. Mannsfeld,Dongqi Li,Hao Xu,Quanquan Guo,Hai I. Wang,Francesco Scotognella,Minghao Yu,Xinliang Feng
摘要
Charge/energy separation across interfaces of plasmonic materials is vital for minimizing plasmonic losses and enhancing their performance in photochemical and optoelectronic applications. While heterostructures combining plasmonic two-dimensional transition metal carbides/nitrides (MXenes) and semiconducting transition metal dichalcogenides (TMDs) hold significant potential, the mechanisms governing plasmon-induced carrier dynamics at these interfaces remain elusive. Here, we uncover a distinctive secondary excitation phenomenon and an ultrafast charge/energy transfer process in heterostructure films composed of macro-scale Ti3C2Tx and MoS2 films. Using Rayleigh–Bénard convection and Marangoni effect-induced self-assembly, we fabricate large-scale (square centimeters) Ti3C2Tx and MoS2 films composed of edge-connected monolayer nanoflakes. These films are flexibly stacked in a controlled sequence to form macroscopic heterostructures, enabling the investigation and manipulation of excited-state dynamics using transient absorption and optical pump-terahertz probe spectroscopy. In the Ti3C2Tx-MoS2 heterostructure, we observe a secondary excitation in MoS2 driven by the surface plasmon resonance of Ti3C2Tx. This phenomenon, with a characteristic rise time constant of ∼70 ps, is likely facilitated by acoustic phonon recycling across the interface. Further interfacial thermal transport engineering─achieved by tailoring the sequence and combination of interfaces in trilayer heterostructures─allows extending the characteristic time to ∼175 ps. Furthermore, we identify a sub-150 fs ultrafast charge/energy transfer process from Ti3C2Tx to MoS2. The transfer efficiency is strongly dependent on the excitation photon energy, resulting in amplified photoconductivity in MoS2 by up to ∼180% under 3.10 eV excitation. These insights are crucial for developing plasmonic MXene-based heterostructures, paving the way for advancements in photochemical and optoelectronic applications.
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