High output InGaN red laser diodes through implementation of AlGaInN interlayer

We examined the effect of AlGaInN interlayer on the performance of red InGaN laser diodes through numerical simulations. The findings indicate a significant rise in output power from 146 mW to 170 mW as well as an improvement in slope efficiency from 0.23 W/A to 0.52 W/A. Additionally, the proposed device exhibits improved gain and radiative current density.