钝化
光致发光
量子点
材料科学
卤化物
光电子学
兴奋剂
量子产额
X射线光电子能谱
钙钛矿(结构)
二极管
高分辨率透射电子显微镜
透射电子显微镜
光谱学
紫外线
发光二极管
光化学
分析化学(期刊)
纳米技术
发射光谱
发光
作者
Pouriya Naziri,Asım Önal,Paul Simon,Saba Sepahban Shahgoli,Alp Yilmaz,Naeimeh Sadat Peighambardoust,Sedat Nizamoğlu,Umut Aydemir
标识
DOI:10.1021/acsanm.5c03682
摘要
The intrinsic instability of CsPbI 3 quantum dots (QDs) presents a major challenge for their practical deployment in optoelectronic devices. Here, we demonstrate the combined effects of Ag + doping and halide (Cl – /I – ) passivation to enhance the structural and optical stability of CsPbI 3 QDs. Partial substitution of Pb 2+ by Ag + leads to lattice contraction and defect suppression, while Cl – acts as a surface-localized passivating agent. Structural analyses (X-ray diffraction, high-resolution transmission electron microscopy, and high-resolution scanning transmission electron microscopy) confirm successful Ag + incorporation without secondary phase formation, and X-ray photoelectron spectroscopy depth profiling reveals surface enrichment of Cl – . Mixed doping with AgCl and AgI precursors effectively stabilizes the cubic perovskite phase, increasing the photoluminescence quantum yield (PLQY) from ∼85 to 96.6% and reducing nonradiative recombination, as supported by time-resolved photoluminescence measurements. The optimized CsPb 1– x Ag x I 3 ( x = 0.025 AgCl + 0.025 AgI) exhibits outstanding photostability, retaining ∼41% of its initial PLQY after 70 days of continuous ultraviolet exposure. When integrated into red-emitting light-emitting diode devices, these QDs deliver external quantum efficiencies up to 36.8%, with stable and saturated emission. These results establish Ag + /halide codoping as a powerful strategy to advance CsPbI 3 QDs toward robust and high-performance optoelectronic applications.
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