Easy fabrication of performant and broadband response SnS/Si photodetector

Broad response band photodetectors from ultraviolet (UV) to infrared (IR) range have attracted much attention in environmental monitoring, telecommunications, and thermal imaging. In this study, a simple method is proposed to fabricate photodetectors based on graphene/stannous sul-fide/silicon (Graphene/SnS/Si) heterojunction. The device was obtained by depositing SnS film on the Si substrate using the thermal evaporation technique. The graphene film is used as a transparent electrode for charge collection efficiently, and SnS/Si ensures that the device generates a uniform photocurrent under the light. The fabricated photodetector has a broad response band from visible to the near-infrared regime, high response speed with a fast-rising time of 11.0 ms at the bias of −5 V under 980 nm, and excellent responsivity up to 1.17 AW-1, and the responsivity for 1550 nm is as large as 17.31 mAW−1. Simultaneously, the self-powered characteristic can be realized. The gra-phene/SnS/Si heterojunction has a wideband and fast response, which may be used in future in-frared and even mid-infrared photoelectric detection.