Plasmonic Al, Ga and in-doped zinc oxide nanoparticles as key components for the design of electrophoretic inks with MWIR and LWIR absorbance properties

Doped zinc oxide nanocrystals (NCs) are halfway through semiconductors and metals. They exhibit unique optoelectronic properties from a high surface density of free-charge-carriers, which are responsible for localized surface plasmon resonance (LSPR). Here, a one-pot approach is presented to synthesize doped aluminum, gallium or indium zinc oxide NCs, making them all stable in non-polar media. The effect of doping on the growth mechanisms and the final crystalline structure were studied as a function of the aliovalent doping atom used. Doping atoms were integrated by substitution of Zn atom into the crystalline mesh of ZnO with a wurtzite phase identified as the primary crystalline phase for all samples by X-ray Diffraction (XRD). Typical aluminiun doped ZnO NCs (AZO) or Gallium doped NCs (GZO) nanoflowers were identified as a single crystalline structure by High-Resolution-Transmission Electron Microscopy (HR-TEM). Indium doped ZnO NCs (IZO) and pristine ZnO appeared significantly different with spherical and heart-like shapes, respectively. The doping level tendency was identified through Energy Dispersive X-ray (EDX) and increased form Al to Ga and In doping atoms. All plasmonic doped NCs have broadband infrared absorption in the Middle-wave (MWIR) and Long-wave infrared (LWIR) wavelengths, making them interesting for thermal regulation or thermal camouflage. As part of the latter application, dispersions of doped ZnO NCs were formulated as electrophoretic inks and their IR-absorbing performances determined by using a homemade setup including an infrared camera. AZO, GZO, and IZO NCs based inks achieved temperature contrasts of 15 °C and 6 °C in the MWIR and LWIR wavelengths.