Packages for Fast Switching HV GaN Power Devices

GaN power devices approach new frontiers in terms of switching speed. In purpose of quantification of the limits a Figure of Merit (FOM) for fast switching semiconductors is developed, that provides a first overview on suitability for fast switching. Combining the switching parameters with parasitic parameters coming from the module design, derives a second FOM for a fast switching power module. This comparison of HV GaN devices with SiC and Si state of the art fast switching power devices shows the superior properties regarding fast switching potentials of HV GaN. Nevertheless, to make use of these properties the packages of the semiconductors have to be adapted. In this paper an advanced design of power module for fast switching HV GaN-HEMTs based on new packaging technologies is presented and its theoretical switching limits are compared with a wire bonded module.