纳米线
晶体管
兴奋剂
静电学
材料科学
场效应晶体管
半导体
表面电荷
掺杂剂
硅
光电子学
纳米技术
介电常数
凝聚态物理
物理
电介质
量子力学
电压
标识
DOI:10.1109/ted.2021.3096779
摘要
Semiconductor doping is limited by such practical concerns as bandgap narrowing and solid solubility limits of dopants. Bound-charge engineering (BCE) bypasses these limits by doping with surface bound charge located on the interface between a semiconductor and an adjacent low-permittivity oxide; it can be used to reduce depletion lengths of junctions in field-effect transistors (FETs). BCE is established by basic electrostatics and is widely applicable to emerging materials and novel devices. In this work, an analytical surface potential model for gate-all-around BCE-assisted silicon nanowire FETs, with arbitrary and possibly distinct spacer and gate oxides, is derived. This model is based on scaling theory and verified against atomistic quantum transport simulations; it provides an intuitive formalism for developing and modeling devices with BCE.
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