明细余额
带隙
偏移量(计算机科学)
太阳能电池效率
光伏系统
光电子学
太阳能电池
带偏移量
半导体
选矿厂
能量转换效率
电压
材料科学
光学
电气工程
物理
计算机科学
价带
工程类
程序设计语言
量子力学
作者
Richard R. King,D. M. Bhusari,Andreea Boca,D. C. Larrabee,X.-Q. Liu,Wonbin Hong,C. M. Fetzer,D. C. Law,N.H. Karam
摘要
Abstract The potential for new 4‐, 5‐, and 6‐junction solar cell architectures to reach 50% efficiency is highly leveraging for the economics of concentrator photovoltaic (CPV) systems.The theoretical performance of such next‐generation cells, and experimental results for 3‐ and 4‐junction CPV cells, are examined here to evaluate their impact for real‐world solar electricity generation. Semiconductor device physics equations are formulated in terms of the band gap‐voltage offset W oc ( E g / q ) − V oc , to give a clearer physical understanding and more general analysis of the multiple subcell band gaps in multijunction cells. Band gap‐voltage offset is shown experimentally to be largely independent of band gap E g for a wide range of metamorphic and lattice‐matched semiconductors from 0.67 to 2.1 eV. Its theoretical E g dependence is calculated from that of the radiative recombination coefficient, and at a more fundamental level using the Shockley‐Queisser detailed balance model, bearing out experimental observations. Energy production of 4‐, 5‐, and 6‐junction CPV cells, calculated for changing air mass and spectrum over the course of the day, is found to be significantly greater than for conventional 3‐junction cells. The spectral sensitivity of these next‐generation cell designs is fairly low, and is outweighed by their higher efficiency. Lattice‐matched GaInP/GaInAs/Ge cells have reached an independently confirmed efficiency of 41.6%, the highest efficiency yet demonstrated for any type of solar cell. Light I‐V measurements of this record 41.6% cell, of next‐generation upright metamorphic 3‐junction cells with 40% target production efficiency, and of experimental 4‐junction CPV cells are presented. Copyright © 2010 John Wiley & Sons, Ltd.
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