Mask roughness challenges in extreme ultraviolet mask development

Despite significant progress in the commercialization of extreme ultraviolet (EUV) lithography, many challenges remain. Although availability of a reliable high power source is arguably the most daunting of these challenges, important mask issues are also of major concern. The issue of EUV phase roughness that can arise from either multilayer or capping layer roughness has recently become of increasing concern. The problem with mask phase roughness is that it couples to image plane speckle and thus line-edge roughness (LER). The coupling; however, depends on many factors including roughness magnitude, roughness correlation length, illumination partial coherence, aberrations and defocus, and numerical aperture. Analysis shows that only on the order of 50 pm multilayer roughness may be tolerable at the 22 nm half-pitch node. The analysis; however, also shows that the difficulty does not scale with future node reductions. Moreover, it is found that ruthenium is a particularly bad choice for capping layer from the perspective of phase roughness and that cleaning damage in such a multilayer could lead to unacceptable image-plane LER.