Characterization of Semiconductor Thin Films by Grazing Incident X-ray Topography

X-ray topographic studies on characterization of semiconductor thin layer were reviewed. Reflection topographs of thin layer were taken by synchrotron radiation X-ray from a storage ring. In these papers, relaxation mechanisms of mismatch in lattice constant between thin layer and substrate were clarified and critical thickness for formation of misfit dislocations was determined for various hetero-epitaxial grown semiconductor thin film. Investigations using grazing incident X-ray topography on semiconductor thin film were also surveyed.