Electrochemical Strategy for High‐Resolution Nanostructures in Laser‐Heat‐Mode Resist Toward Next Generation Diffractive Optical Elements

For achieving high-resolution nanostructures for next-generation diffractive optical elements (DOEs) using an environmentally friendly process, an electrochemical development strategy is proposed and developed using AgInSbTe-based laser heat-mode resist (AIST-LHR). Based on the electrical resistivity difference of amorphous and crystalline phases for this resist, an etching selectivity ratio of ≈30:1 (i.e., the etch ratio between the amorphous and crystalline ones) is achieved through the oxidation of Fe³⁺ ions with the assisted pitting activation etching using Cl^- ions in an acid medium. Nanostructures with a minimum feature size down to 41 nm are successfully generated, including grating patterns, meta-surface optical structures, gears, and English characters. Using a post-plasma etching process, the nanostructures are successfully transferred from the AIST-HLR onto silica substrate, and X-ray grating patterns with a line space of 80 nm are created as a demonstration for its potential applications in DOEs.