绝缘栅双极晶体管
材料科学
光电子学
饱和电流
电压
饱和(图论)
击穿电压
晶体管
纳秒
电场
双极结晶体管
电气工程
物理
工程类
光学
激光器
数学
组合数学
量子力学
作者
Kai Wang,Shanguan Shaofei,Peng Zhang,Shuang Liu,Mengdi Li,Xiaohua Ma,Yue Hao
标识
DOI:10.1088/1361-6641/ac81e5
摘要
Abstract In this paper, a novel GaN-based field stop-insulated gate bipolar transistor (FS-IGBT) is designed, which combines GaN-based Fin-MOS with the conventional material FS-IGBT, and the static and dynamic electrical characteristics of the device are simulated by Silvaco. The results show that the structure has a high saturation current ( I on,sat ) density of 155 kA cm −2 at 10 V gate voltage ( V ge ), an on-state voltage ( V on ) of 3.5 V, a breakdown voltage (BV) of 1650 V, and a switching speed of nanoseconds. The characteristics of the device are analyzed and compared with Fin-MOS. The results demonstrate that the vertical GaN-based device can display both high current density and high BV due to the FS layer that adjusts the electric field distribution in the N-drift region. The paper also analyzes the selection of device parameters and feasibility of device manufacturing based on the existing material growth method and device manufacturing technology.
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