硫族元素
成核
过渡金属
材料科学
单体
单层
空位缺陷
合金
纳米技术
化学工程
化学
结晶学
催化作用
冶金
聚合物
有机化学
复合材料
工程类
作者
Yonggang Zuo,Can Liu,Liping Ding,Ruixi Qiao,Jinpeng Tian,Chang Liu,Qinghe Wang,Guodong Xue,Yilong You,Quanlin Guo,Jinhuan Wang,Ying Fu,Kehai Liu,Xu Zhou,Hao Hong,Muhong Wu,Xiaobo Lu,Rong Yang,Guangyu Zhang,Dapeng Yu
标识
DOI:10.1038/s41467-022-28628-7
摘要
The precise precursor supply is a precondition for controllable growth of two-dimensional (2D) transition metal dichalcogenides (TMDs). Although great efforts have been devoted to modulating the transition metal supply, few effective methods of chalcogen feeding control were developed. Here we report a strategy of using active chalcogen monomer supply to grow high-quality TMDs in a robust and controllable manner, e.g., MoS2 monolayers perform representative photoluminescent circular helicity of ~92% and electronic mobility of ~42 cm2V-1s-1. Meanwhile, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation, reaction, vacancy healing and alloy formation during the growth. Our work offers a degree of freedom for the controllable synthesis of 2D compounds and their alloys, benefiting the development of high-end devices with desired 2D materials.
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