Examination of MOS structures by a 3D particle dynamics Monte-Carlo simulator including electrothermal effects

The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo program for submicron MOS transistors is now extended with electronphonon interaction models for intervalley scattering and with a carrier-lattice energy exchange model. The impact ionisation and Auger recombination models are also improved. The carrier transport and lattice heat transport problems are self-consistently solved. As example the results of simulation, the spatial distribution of electrons, electron-phonon scattering events, impact ionisation events, Auger recombination events and the lattice temperature are presented. A new, low drain-to-source voltage breakdown effect has been observed.