电子迁移率
有机半导体
声子
散射
电荷(物理)
凝聚态物理
载流子
从头算
声子散射
Crystal(编程语言)
联轴节(管道)
从头算量子化学方法
化学物理
化学
材料科学
物理
分子
量子力学
光电子学
计算机科学
冶金
程序设计语言
作者
Nien-En Lee,Jin-Jian Zhou,Luis A. Agapito,Marco Bernardi
出处
期刊:Physical review
[American Physical Society]
日期:2018-03-16
卷期号:97 (11)
被引量:70
标识
DOI:10.1103/physrevb.97.115203
摘要
Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only moderately accurate. We compute from first principles the electron-phonon scattering and the phonon-limited hole mobility of naphthalene crystal in the framework of ab initio band theory. Our calculations combine GW electronic bandstructures, ab initio electron-phonon scattering, and the Boltzmann transport equation. The calculated hole mobility is in very good agreement with experiment between $100--300\phantom{\rule{0.28em}{0ex}}\mathrm{K}$, and we can predict its temperature dependence with high accuracy. We show that scattering between intermolecular phonons and holes regulates the mobility, though intramolecular phonons possess the strongest coupling with holes. We revisit the common belief that only rigid molecular motions affect carrier dynamics in organic molecular crystals. Our paper provides a quantitative and rigorous framework to compute charge transport in organic crystals and is a first step toward reconciling band theory and carrier hopping computational methods.
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