CMOS-Compatible Low-Power Gated Diode Synaptic Device for Hardware- Based Neural Network

A gated diode with a charge trap insulator stack (Al ₂ O ₃ /Si ₃ N ₄ /SiO ₂ ) is proposed as a synaptic device and its potentiation and depression operations have been demonstrated. Using the band-to-band tunneling current, the gated diode operates with low current (in nanoampere range) and is suitable for low-power hardware-based neural networks. Since the proposed device has merits on simple and compact structure (half of a MOSFET) and compatibility with conventional CMOS technology, integration with CMOS peripheral circuits including neuron circuits and driving IC is possible.