Low-temperature spatial atomic layer deposited Ga2O3 films for high-performance flexible deep ultraviolet photodetector

This research aims to prepare amorphous gallium oxide (α-Ga2O3) films for use in flexible deep ultraviolet photodetectors. The films are deposited using high-speed spatial atomic layer deposition (SALD) at different substrate temperatures. The experimental results show that the saturating deposition rate at 145–155 °C is four to sixteen times higher than that of temporal ALD. Moreover, under the saturated SALD conditions the deposited film has less carbon impurities, oxygen-related defects, and greater compactness than under non-saturated conditions. Finally, a high-performance flexible deep ultraviolet α-Ga2O3 photodetector with fast decay time of 161 µs and low dark current density of 6.8 × 10-10 A/cm2 is achieved.