响应度
光电探测器
光电流
材料科学
光电子学
红外线的
暗电流
半导体
量子效率
光电导性
带隙
光伏
光伏系统
光学
物理
生物
生态学
作者
Long Li,Suhui Fang,Rong Yu,Ruoling Chen,hailu wang,Xin Gao,Wenjing Zha,Xiao Yu,Long Jiang,Desheng Zhu,Yan Xiong,Liao Yan-hua,Dingshan Zheng,Wen-Xing Yang,Jinshui Miao
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2023-03-24
卷期号:34 (24): 245202-245202
被引量:1
标识
DOI:10.1088/1361-6528/acc1eb
摘要
Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light-matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performance photodetectors so far. In this work, we successfully synthesized high-quality p-type SnSe NRs by chemical vapor deposition and then fabricated near-infrared photodetectors. The SnSe NR photodetectors show a high responsivity of 376.71 A W-1, external quantum efficiency of 5.65 × 104%, and detectivity of 8.66 × 1011Jones. In addition, the devices show a fast response time with rise and fall time of up to 43μs and 57μs, respectively. Furthermore, the spatially resolved scanning photocurrent mapping shows very strong photocurrent at the metal-semiconductor contact regions, as well as fast generation-recombination photocurrent signals. This work demonstrated that p-type SnSe NRs are promising material candidates for broad-spectrum and fast-response optoelectronic devices.
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