神经形态工程学
材料科学
晶体管
光电子学
电介质
兴奋性突触后电位
兴奋剂
计算机科学
纳米技术
人工神经网络
神经科学
电气工程
人工智能
电压
工程类
生物
抑制性突触后电位
作者
Guangtan Miao,Qingliang Liu,Yepeng Shi,Ranran Ci,Guoxia Liu,Fukai Shan
摘要
The development of large-scale manufacturing and cost-saving artificial synaptic devices is of great significance for the realization of hardware neural networks. In this work, the In2O3 synaptic transistors with boron ion-doped ZrOx as the dielectric layer were fabricated by the solution process. The large counterclockwise hysteresis indicates that the nonvolatile memory capacity of the synaptic transistors was improved by boron ions doping. Typical synaptic functions including excitatory postsynaptic current, paired pulse facilitation, and high-pass filtering properties were simulated by applying gate bias. The multilevel channel conductance can be modulated by successive positive and negative pulses. Additionally, small nonlinearities were shown in the potentiation and depression processes, and high accuracies of 92.0% (small digits) and 93.8% (large digits) were obtained in digital recognition training. This study indicates that oxide-gated synaptic transistors based on the boron ions doping strategy show great potential for neuromorphic applications.
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