Growth of InBi on InSb(100) via molecular beam epitaxy

Binary bismides (AlBi, GaBi, and InBi) are materials that are a part of the familiar III–V material class but have properties that are distinct from the typical nitrides, phosphides, arsenides, and antimonides. Specifically, binary bismides are all predicted to be topologically nontrivial materials that can take on the zinc-blende crystal structure. In addition, these materials all have narrow bandgaps that are suitable for mid-infrared optoelectronics. Successful growth of single-crystalline zinc-blende bismide films has the potential to revolutionize midwave and long-wave infrared devices as well as add topologically nontrivial materials to the III–V family. Here, we present the growth of InBi on InSb(100) substrates using molecular beam epitaxy and characterization of these films using x-ray diffraction and scanning electron microscopy. Additionally, we report attempts at the growth of GaBi on InSb(100) substrates and characterization of these films using x-ray diffraction and transmission electron microscopy. This work demonstrates the growth of InBi on InSb(100) substrates, providing further insight into the bismide material system.