Lv41
780 积分 2025-05-04 加入
High Performance and Reliable 4F2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM
1个月前
已完结
IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites
1个月前
已完结
Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture
1个月前
已完结
3-STAR: A Super-steep switching, Stackable, and Strongly Reliable Transistor Array RAM for Sub-10nm DRAM and beyond
4个月前
已完结
3D X-DRAM: A Novel 3D NAND-like DRAM Cell and TCAD Simulations
4个月前
已完结
Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories
5个月前
已完结
Integration of 0.75 V VDD Oxide-Semiconductor 1T1C Memory with Advanced Logic for an Ultra-Low-Power Low-Latency Cache Solution
9个月前
已完结
High-Density Wafer Level Connectivity Using Frontside Hybrid Bonding at 250nm Pitch and Backside Through-Dielectric Vias at 120nm Pitch After Extreme Wafer Thinning
9个月前
已完结
The Incredible Shrinking Transistor - Shattering Perceived Barriers and Forging Ahead
9个月前
已完结
Intel 18A Platform Technology Featuring RibbonFET (GAA) and PowerVia for Advanced High-Performance Computing
9个月前
已完结