Extremely-low-voltage, high-efficiency and stability-enhanced inverted bottom OLEDs enabled via a p-type/ultra-thin metal/n-doped electron injection layer

A p-type/ultra-thin metal/n-doped electron injection layer is proposed to enhance the electron injection of inverted bottom OLEDs. The OLEDs exhibit an extremely-low voltage of 2.97 V and efficiency of 84.9 lm W −1 at 100 cd m −2 .