材料科学
铁电性
光刻胶
X射线光电子能谱
钝化
薄膜
干法蚀刻
制作
电容器
氢
光电子学
反应离子刻蚀
蚀刻(微加工)
等离子体刻蚀
纳米技术
图层(电子)
化学工程
化学
电气工程
电压
电介质
病理
工程类
有机化学
替代医学
医学
作者
Chun-Kai Huang,Tai‐Bor Wu
摘要
The use of a PtOx thin film as a transient template of Pt electrode in the fabrication of ferroelectric capacitor for memory devices was investigated. Fence-free patterning with a significantly high etch rate, selectivity, and sidewall slope was obtained from dry etching the photoresist-masked PtOx films using Ar/Cl2/O2 helicon wave plasma. The x-ray photoelectron spectroscopy analysis indicates that the redeposition of PtClx etch product can be repressed due to an in situ sidewall passivation with a PtO2 layer resulting from a further oxidation of the etched surface of PtOx film by the introduction of oxygen in the etching gas. Due to the chemical instability of oxygen in the PtOx film, a superior hydrogen blocking effect was also achieved in hydrogen plasma annealing of the Pb(Zr0.5Ti0.5)O3 (PZT) ferroelectric capacitors with the use of PtOx as the top electrode, and the hydrogen degradation of the PZT capacitor was repressed.
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