A 650V Enhancement Mode GaN HEMT Device with Field Plate for Power Electronic Applications

GaN HEMTs are potential devices for future utilizations in power electronic applications. In this paper, an enhancement mode GaN HEMT power device is introduced. We present a schottky metal/p-type GaN gate to obtain positive threshold voltage and a source field plate to balance the electric field. Using Sentaurus TCAD as the simulation tool, the simulated breakdown voltages of the device with and without source field plate are 795V and 239V at L GD =7µm, respectively. In order to obtain the highest breakdown voltage, the structure of the source field plate is analyzed and optimized before fabrication. The tested breakdown voltage of the fabricated device is 725V, and the tested threshold voltage is 1.15V.