分子束外延
光电子学
材料科学
截止频率
衍射
红外线的
探测器
光学
光电探测器
量子效率
红外探测器
暗电流
外延
波长
超晶格
图层(电子)
物理
纳米技术
作者
Adam P. Craig,Veronica Letka,Mark Carmichael,T. Golding,Andrew Marshall
摘要
III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb–InAs strained layer superlattice, operation close to room temperature was demonstrated with cutoff wavelengths of 4.82 and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current, and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity was carried out. 1/f noise effects are considered. Results indicate that these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.
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