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Toward Simultaneous Achievement of Outstanding Durability and Photoelectrochemical Reaction in Cu2O Photocathodes via Electrochemically Designed Resistive Switching (Adv. Energy Mater. 39/2021)

光电流 材料科学 电阻式触摸屏 电化学 蛋白质丝 光电子学 纳米技术 光电化学 金属绝缘体金属 电阻随机存取存储器 金属 电极 电压 电气工程 复合材料 电容器 物理 量子力学 工程类 冶金
作者
Dong Su Kim,Dae Seok Kim,Ji Hoon Choi,Hee Won Suh,Hak Hyeon Lee,Kun Woong Lee,Soyoung Jung,Jeong Jae Kim,Nishad G. Deshpande,Hyung Koun Cho
出处
期刊:Advanced Energy Materials [Wiley]
卷期号:11 (39) 被引量:1
标识
DOI:10.1002/aenm.202170152
摘要

Advanced Energy MaterialsVolume 11, Issue 39 2170152 Cover PictureFree Access Toward Simultaneous Achievement of Outstanding Durability and Photoelectrochemical Reaction in Cu2O Photocathodes via Electrochemically Designed Resistive Switching (Adv. Energy Mater. 39/2021) Dong Su Kim, Dong Su Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorYoung Been Kim, Young Been Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorJi Hoon Choi, Ji Hoon Choi School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorHee Won Suh, Hee Won Suh School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorHak Hyeon Lee, Hak Hyeon Lee School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorKun Woong Lee, Kun Woong Lee School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorSung Hyeon Jung, Sung Hyeon Jung School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorJeong Jae Kim, Jeong Jae Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorNishad G. Deshpande, Nishad G. Deshpande Indian Institute of Information Technology, Surat, Gujarat, 395007 IndiaSearch for more papers by this authorHyung Koun Cho, Hyung Koun Cho School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this author Dong Su Kim, Dong Su Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorYoung Been Kim, Young Been Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorJi Hoon Choi, Ji Hoon Choi School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorHee Won Suh, Hee Won Suh School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorHak Hyeon Lee, Hak Hyeon Lee School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorKun Woong Lee, Kun Woong Lee School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorSung Hyeon Jung, Sung Hyeon Jung School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorJeong Jae Kim, Jeong Jae Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this authorNishad G. Deshpande, Nishad G. Deshpande Indian Institute of Information Technology, Surat, Gujarat, 395007 IndiaSearch for more papers by this authorHyung Koun Cho, Hyung Koun Cho School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419 Republic of KoreaSearch for more papers by this author First published: 21 October 2021 https://doi.org/10.1002/aenm.202170152Citations: 1AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Resistive Switching In article number 2101905, Hyung Koun Cho and co-workers solve the trade-off issue between photo-charge transport and stability originating from the use of insulating protection layers. The electrochemical forming process suggested for the TiO2 protection layer on photocathodes draws inspiration from typical resistive switching behaviors in resistive-type memory with metal/insulator/metal (MIM) structures. From the electrochemical filament forming process and selective Pt-photoelectrodeposition on filaments, the Cu2O/AZO/TiO2 photocathodes exhibit an unprecedented photocurrent density and open-circuit potential and produce vigorous hydrogen and oxygen evolution. Citing Literature Volume11, Issue39October 21, 20212170152 RelatedInformation
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